TC58NVG0S3ETAI0 原装 NAND FLASH
闪存 1 Gbyte并行接口 TSOP封装 48引脚 NAND
闪存 IC 是非易失 RAM，必须按块写入/擦除。 它有限定的写入周期的次数，适用于不经常更改的程序存储。
1 GBIT (128M × 8 BIT) CMOS NAND E2 PROM
TC58NVG0S3ETAI0 原装 NAND FLASH的技术参数：
|
储器大小 |
1 Gbyte |
|
接口类型 |
并行 |
|
封装类型 |
TSOP |
|
引脚数目 |
48 |
|
组织 |
128M x 8 |
|
安装类型 |
表面贴装 |
|
单元类型 |
NAND |
|
工作电源电压 |
-0.6 V ~ 4.6 V |
|
安装风格 |
SMD/SMT |
|
工作温度 |
-40 ~ 85°C |
|
封装 |
Tray |
|
产品类型 |
NAND Flash |
|
速度 |
25 ns |
|
块组织 |
对称 |
TC58NVG0S3ETAI0 原装 NAND FLASH的描述：
The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58NVG0S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
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