MT40A1G16KD-062E:E 原装全新 DDR4
制造商 | Micron Technology |
产品种类 | 动态随机存取存储器 |
数据总线宽度 | 16 bit |
安装风格 | SMD/SMT |
存储容量 | 16 Gbit |
（max）时钟频率 | 1600 MHz |
电源电压（max） | 1.2 V |
工作温度 | 0 C to + 95 C |
1. VDD = VDDQ = 1.2V ±60mV
2. VPP = 2.5V, –125mV, +250mV
3. On-die, internal, adjustable VREFDQ generation
4. 1.2V pseudo open-drain I/O
5. TC maximum up to 95°C
6. – 64ms, 8192-cycle refresh up to 85°C
7. – 32ms, 8192-cycle refresh at >85°C to 95°C
8. 16 internal banks (x4, x8): 4 groups of 4 banks each
9. 8 internal banks (x16): 2 groups of 4 banks each
10. 8n-bit prefetch architecture
11. Programmable data strobe preambles
12. Data strobe preamble training
13. Command/Address latency (CAL)
14. Multipurpose register READ and WRITE capability
15. Write leveling
16. Self refresh mode
17. Low-power auto self refresh (LPASR)
18. Temperature controlled refresh (TCR)
19. Fine granularity refresh
20. Self refresh abort
21. Maximum power saving
22. Output driver calibration
23. Nominal, park, and dynamic on-die termination(ODT)
24. Data bus inversion (DBI) for data bus
25. Command/Address (CA) parity
26. Databus write cyclic redundancy check (CRC)
27. Per-DRAM addressability
28. Connectivity test
29. JEDEC JESD-79-4 compliant
30. sPPR and hPPR capability
热销优势料，迅丰达电子科技推荐！保证全新原装，原包原盒！
MT29F64G08CBABAWP固带 10K 23+
KLM8G1GETF-B041 10K 23+
KLMBG2JETD-B041 10K 23+
KLMAG1JETD-B041 10K 23+
K4E6E304EC-EGCG 10K 23+
K4B4G1646E-BCNB 10K 23+
K4F6E3S4HM-MGCJ 10K 23+
K4AAG165WA-BCWE 10K 23+
K4B4G0846E-BCNB 10K 23+
K4UBE3D4AA-MGCL 10K 23+
K4UBE3D4AB-MGCL 10K 23+
K4U6E3S4AA-MGCR 10K 23+
全新原包原装可含税（香港可交）
询价
