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动态随机存储器 NT5CB128M16JR-FL
动态随机存储器 NT5CB128M16JR-FL
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动态随机存储器 NT5CB128M16JR-FL

型号:

NT5CB128M16JR-FL

制造商:

NANYA/南亚

封装:

FBGA

批次:

23+

无铅/环保:

无铅/环保

产品信息

动态随机存储器 NT5CB128M16JR-FL 的描述:

The 2Gb Double-Data-Rate-3 (DDR3(L)) is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs.

The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 banks or 16Mbit x 16 I/Os x 8 bank devices.

 

These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling).

 

 All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages.

 

动态随机存储器 NT5CB128M16JR-FL 的参数:

制造商

NANYA

框架

128Mx16

DRAN 类型

DRAM DDR3

存储器类型

2Gbit

工作电压

1.5V

针脚数

96-Pin

封装

TFBGA

RoHS

 

动态随机存储器 NT5CB128M16JR-FL 的特征:

JEDEC DDR3 Compliant

- 8n Prefetch Architecture

- Differential Clock(CK/CK) and Data Strobe(DQS/DQS)

- Double-data rate on DQs, DQS and DMl

 

Data Integrity

- Auto Self Refresh (ASR) by DRAM built-in TS

- Auto Refresh and Self Refresh Modesl

 

Power Saving Mode

- Power Down Mode

 

Signal Integrity

- Configurable DS for system compatibility

- Configurable On-Die Termination

- ZQ Calibration for DS/ODT impedance accuracy viaexternal ZQ pad (240 ohm ± 1%)l

 

Signal Synchronization

- Write Leveling via MR settings 5

- Read Leveling via MPR

 

Interface and Power Supply

- SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V)

- SSTL_1353for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V)

 

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