供应K4B4G1646E-BCNB全新原装 DDR3
制造商 | SAMSUNG |
RoHS | 是 |
工作电压 | 1.5V |
容量 | 4GB |
架构 | 512MX8 |
封装 / 箱体 | 96 FBGA |
工作温度 | 0°C~85°C |
The 4Gb DDR3 SDRAM E-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration,
On Die Termination using ODT pin and Asynchronous Reset
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a
pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address
information in a RAS/CAS multiplexing style. The DDR3 device operates
with a single 1.5V(1.425V~1.575V)power supply and 1.5V(1.425V~1.575V)
VDDQ.
The 4Gb DDR3 E-die device is available in 96ball FBGAs(x16)
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