原装SST39VF800A-70-4I-EKE NAND FLASH
闪存 存储器 IC 8Mb（512K x 16） 并联 70 ns 48-TSOP
ST39VF Series 8 Mbit 512 K x 16 3 V Multi-Purpose Flash - TSOP-48
是一款并行8M(1M x16 )存储器,使用SST专有的高性能CMOS超闪存技术制造，单电压操作和读写2.7-3.6V，快速读取访问时间：70Ns，低功耗 : 7mA(典型)，待机：8uA(典型) ,存储器TSOP48引脚,芯片可以擦写10,000次，数据可保留100年，产品可以耐高温85度，耐低温零下40度
原装SST39VF800A-70-4I-EKE NAND FLASH的技术属性：
安装方式： Surface Mount
存储器类型 非易失
存储器格式 闪存
技术 闪存
存储容量 8Mb（512K x 16）
Memory Density: 8Mb
Memory Organization: 512 K x 16
存储器接口 并联
写周期时间 - 字，页 20µs
访问时间 70 ns
电压 - 供电 2.7V ~ 3.6V
Supply Voltage-Nom: 2.7V to 3.6V
工作温度 -40°C ~ 85°C（TA）
安装类型 表面贴装型
封装/外壳 48-TFSOP（0.724"，18.40mm 宽）
原装SST39VF800A-70-4I-EKE NAND FLASH的描述：
CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. This device writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.
Featuring high performance Word-Program, provides a typical Word-Program time of 14 µsec (microsecond). To protect against inadvertent write, they have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.
This is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. When programming a flash device, the total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.
To meet surface mount requirements, it is offered in 48-lead TSOP packages and 48-ball TFBGA packages as well as Micro-Packages.
SST’s SST39VF800A-70-4I-EKE is a 8Mb (512k x 16), 70 nano second, 3 volt, 48 lead Thin Small Outline Package (TSOP) in an Industrial Temperature specification.
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