原装TC58NVG0S3HTAI0 NAND FLASH供应
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1G BIT (128M ′ 8 BIT) CMOS NAND E2
原装TC58NVG0S3HTAI0 NAND FLASH的技术参数：
制造商 ： Kioxia
产品种类 ： NAND闪存
安装风格 ： SMD/SMT
封装 / 箱体 ： TSOP-48
存储容量 ： 1 Gbit
接口类型 ： Parallel
组织 ： 128 M x 8
数据总线宽度 ： 8 bit
电源电压 ： 2.7 V ~ 3.6 V
电源电流(max) ： 30 mA
工作温度 ： - 40 C ~ + 85 C
封装 ： Tray
商标 ： Kioxia America
存储类型 ： NAND
湿度敏感性 ： Yes
产品类型 ： NAND Flash
工厂包装数量 ： 96
Capacity (bit) ： 1G
Tech. node (nm) ： 24
Page size (bit) ： (2048+128)×8
I/O (bit) ： 8
原装TC58NVG0S3HTAI0 NAND FLASH的描述：
The TC58NVG0S3HTAI0 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes ′ 64 pages ′ 1024 blocks.
The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes ′ 64 pages).
The TC58NVG0S3HTAI0 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
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