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供应原装 TC58CVG2S0HRAIJ  NAND FLASH
供应原装 TC58CVG2S0HRAIJ  NAND FLASH
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原装 TC58CVG2S0HRAIJ NAND FLASH

型号:

TC58CVG2S0HRAIJ

制造商:

TOSHIBA /KIOXIA东芝,铠侠

封装:

WSON-8

批次:

22+

无铅/环保:

无铅/环保

产品信息

原装 TC58CVG2S0HRAIJ  NAND FLASH

FLASH - NANDSLC) 存储器 IC 4Gb512M x 8SPI 133 MHz 300 μs 8-WSON6x8

 

 

原装 TC58CVG2S0HRAIJ  NAND FLASH 的技术参数:

制造商:

Kioxia

产品种类:

NAND闪存

RoHS:

 

安装风格:

SMD/SMT

封装 / 箱体:

WSON-8

存储容量:

4 Gbit

接口类型:

Serial

组织:

512 M x 8

数据总线宽度:

8 bit

电源电压:

2.7 V to 3.6 V

电源电流max:

24 mA

工作温度:

- 40 C to + 85 C

封装:

Tray

商标:

Kioxia America

(MAX)时钟频率:

133 MHz

湿度敏感性:

Yes

产品类型:

NAND Flash

速度:

300 us

工厂包装数量:

480

子类别:

Memory & Data Storage

 

The TC58CVG2S0HRAIJ is a Serial Interface NAND Flash memory for embedded applications which supports the SPI interface. The TC58CVG2S0HRAIJ is organized as (4096 + 128) bytes × 64 pages × 2048 blocks.

 

The device has a 4224 byte data buffer which allows program and read data to be transferred between the buffer and the memory cell array in 4224-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).

 

The device has the high speed mode for sequential Page Read operation. When high speed mode is enabled, the average of tR is shortened.

The TC58CVG2S0HRAIJ has ECC logic on the chip and 8bit read errors for each (512 bytes + 16 bytes) can be corrected. The details of the internal ECC function is shown in 4.15. Internal ECC.