MT29F2G08ABAEAWP-IT:E 原装 NAND FLASH
Micron NAND Flash devices include an asynchronous data interface for high-perform-ance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfercommands, address, and data. There are five control signals used to implement the asyn-chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals controlhardware write protection and monitor device status (R/B#)
This hardware interface creates a low pin-count device with a standard pinout that re-mains the same from one density to another, enabling future upgrades to higher densi-ties with no board redesign.
MT29F2G08ABAEAWP-IT:E 原装 NAND FLASH 的技术参数：
|
制造商 |
MICRON |
|
存储器类型 |
非易失 |
|
存储器格式 |
闪存 |
|
技术 |
闪存-NAND |
|
存储容量 |
2Gb（256M x 8） |
|
存储器接口 |
并联 |
|
访问时间 |
95ns |
|
写周期时间 - 字，页 |
60 ns |
|
电压 - 供电 |
2.7V ~ 3.6V |
|
工作温度 |
-40°C ~ 85°C（TA） |
|
包装量 |
960 |
|
安装类型 |
表面贴装型 |
|
封装/箱体 |
48-TSOP |
|
MTFC8GAKAJCN-4MIT |
MICRON/镁光 |
|
MTFC4GACAJCN-4MIT |
MICRON/镁光 |
|
MTFC4GACAJCN-1MWT |
MICRON/镁光 |
|
MT53E256M32D2DS-053WT:B |
MICRON/镁光 |
|
MT53D512M64D4HR-053WT:D |
MICRON/镁光 |
|
MT53D512M32D2DS-053WT:D |
MICRON/镁光 |
|
MT52L512M32D2PF-107WT:B |
MICRON/镁光 |
|
MT52L256M32D1PF-107WT:B |
MICRON/镁光 |
|
MT41K64M16TW-107:J |
MICRON/镁光 |
|
MT41K64M16TW-107IT:J |
MICRON/镁光 |
|
MT41K512M8DA-107:P |
MICRON/镁光 |
|
MT41K256M16TW-107:P |
MICRON/镁光 |
|
MT41K256M16TW-107IT:P |
MICRON/镁光 |
|
MT41K256M16TW-107AIT:P |
MICRON/镁光 |
|
MT41K128M16JT-125:K |
MICRON/镁光 |
|
MT41K128M16JT-125IT:K |
MICRON/镁光 |
|
MT40A512M16LY-075:E |
MICRON/镁光 |
|
MT29F64G08CBABBWPR:B |
MICRON/镁光 |
|
MT29F4G08ABAEAWP:E |
MICRON/镁光 |
|
MT29F2G08ABAGAWP-IT:G |
MICRON/镁光 |
|
MT29F2G08ABAEAWP-IT:E |
MICRON/镁光 |
|
MT29F2G08ABAEAWP:E |
MICRON/镁光 |
|
MT29F2G08ABAEAH4:E |
MICRON/镁光 |
|
MT29F2G01ABAGDWB-IT:G |
MICRON/镁光 |
|
MT53D512M64D4HR-053 WT:D |
MICRON/镁光 |
询价
