S34ML01G100BHI000 原装 NAND FLASH
IC FLASH 1GBIT PARALLEL 63BGA
S34ML01G100BHI000 原装 NAND FLASH 的技术参数：
制造商 | Spansion |
产品类型 | NAND 闪存 |
容量 | 1Gbit（128M x 8） |
写周期时间 - 字，页 | 25NS |
温度 | -40°C to 85°C（TA） |
存储器格式 | FLASH |
存储器类型 | 非易失 |
存储器接口 | 并联 |
电压-供电 | 2.7V ~ 3.6V |
安装类型 | 表面贴装型 |
湿度敏感性 | 是 |
RoHS | 是 |
封装 / 箱体 | 63-BGA（11x9） |
S34ML01G100BHI000 原装 NAND FLASH 的描述：
The Cypress S34ML01G1, S34ML02G1, and S34ML04G1 series is offered with a 3.3-V VCC power supply, and with ×8 or ×16 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The page size for ×8 is (2048 + 64 spare) bytes; for ×16 (1024 + 32) words. Each block can be programmed and erased up to 100,000 cycles with ECC (error correction code) on.
To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory. The chip supports CE# don't care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation.
The devices have a Read Cache feature that improves the read throughput for large files.
During cache reading, the devices load the data in a cache register while the previous data is transferred to the I/O buffers to be read
只做原装，价格优势，原盒原标 ，有需要的联系
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