供应S34ML01G100TFI000 原装 NAND FLASH
闪存 - NAND 存储器 IC 1Gb 并联 48-TSOP
S34ML01G100TFI000 原装 NAND FLASH 的技术参数：
产品种类 | NAND闪存 |
RoHS | 是 |
安装风格 | SMD/SMT |
封装 / 箱体 | TSOP-48 |
系列 | S34ML01G1 |
存储容量 | 1 Gbit |
接口类型 | Parallel |
数据总线宽度 | 8 bit |
电源电压 | 2.7 V to 3.6 V |
工作温度 | - 40 C to + 85 C |
存储类型 | NAND |
写周期时间 - 字，页 | 25 ns |
结构 | Multiplane |
湿度敏感性 | Yes |
S34ML01G100TFI000 原装 NAND FLASH 的描述：
The Cypress S34ML01G1, S34ML02G1, and S34ML04G1 series is offered with a 3.3-V VCC power supply, and with ×8 or ×16 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The page size for ×8 is (2048 + 64 spare) bytes; for ×16 (1024 + 32) words. Each block can be programmed and erased up to 100,000 cycles with ECC (error correction code) on.
To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory. The chip supports CE# don't care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation.
The devices have a Read Cache feature that improves the read throughput for large files. During cache reading, the devices load the data in a cache register while the previous data is transferred to the I/O buffers to be read.
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