S34ML01G200BHI000 原装 NAND FLASH
闪存 - NAND 存储器 IC 1Gb 并联 63-BGA（11x9）
S34ML01G200BHI000 原装 NAND FLASH 的技术参数：
产品种类 | NAND闪存 |
RoHS | 是 |
安装风格 | SMD/SMT |
封装 / 箱体 | BGA-63 |
系列 | S34ML01G2 |
存储容量 | 1 Gbit |
接口类型 | Parallel |
定时类型 | Asynchronous |
数据总线宽度 | 8 bit |
电源电压 | 2.7 V to 3.6 V |
电源电流（max） | 30 mA |
工作温度 | - 40 C to + 85 C |
存储类型 | NAND |
速度 | 25 ns |
结构 | Multiplane |
湿度敏感性 | Yes |
S34ML01G200BHI000 原装 NAND FLASH 的描述：
The S34ML01G2, S34ML02G2, and S34ML04G2 series is offered with a 3.3V VCC power supply, and with x8 or x16 I/O interface.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
The page size for x8 is (2048 + spare) bytes; for x16 (1024 + spare) words. To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory. The chip supports CE# don't care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation.
The devices have a Read Cache feature that improves the read throughput for large files. During cache reading, the devices load the data in a cache register while the previous data is transferred to the I/O buffers to be read.
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