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供应W25N01GWZEIGS 原装 NAND FLASH
供应W25N01GWZEIGS 原装 NAND FLASH
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W25N01GWZEIGS 原装 NAND FLASH

型号:

W25N01GWZEIGS

制造商:

Winbond

封装:

WSON-8

批次:

23+

无铅/环保:

无铅/环保

产品信息

W25N01GWZEIGS 原装 NAND FLASH 的技术参数:

制造商

WINBOND

类别

集成电路(IC) 存储器

产品类型

NOR FLASH

封装/箱体

WSON-8

RoHS

商标

Winbond

产品种类

NOR 闪存

工作电压

2.7V~3.6V

速度

104MHz

工作温度

-40°C~+85°C

 

 

The W25N01GW (1G-bit) Serial SLC NAND Flash Memory provides a storage solution for systems with limited space, pins and power. The W25N SpiFlash family incorporates the popular SPI interface and the traditional large NAND non-volatile memory space. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data.

 

The device operates on a single 1.70V to 1.95V power supply with current consumption as low as 25mA active and 10μA for standby. All W25N SpiFlash family devices are offered in space-saving packages which were impossible to use in the past for the typical NAND flash memory. The W25N01GW 1G-bit memory array is organized into 65,536 programmable pages of 2,048-bytes each.

 

The entire page can be programmed at one time using the data from the 2,048-Byte internal buffer. Pages can be erased in groups of 64 (128KB block erase). The W25N01GW has 1,024 erasable blocks. The W25N01GW supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions.

 

 The W25N01GW provides a new Continuous Read Mode that allows for efficient access to the entire memory array with a single Read command. This feature is ideal for code shadowing applications. A Hold pin, Write Protect pin and programmable write protection, provide further control flexibility.

 

Additionally, the device supports JEDEC standard manufacturer and device ID, one 2,048-Byte Unique ID page, one 2,048-Byte parameter page and ten 2,048-Byte OTP pages. To provide better NAND flash memory manageability, user configurable internal ECC, bad block management are also available in W25N01GW.

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