原装NT5CC256M16EP-EK DRAM动态随机存储器
NT5CC256M16EP-EK Commercial DDR3(L) 4Gb SDRAM
低功耗双倍数据率同步动态随机存储器NT5CC256M16EP-EK的技术参数：
制造商 : NANYA
电压 : 1.35v
无铅/环保 : 无铅/环保
温度 : 0~95°C
速度 : 933 MHZ
容量 : 4Gb
Interface And Power : SSTL_135 (1.35V, 1.35V) / SSTL-15(1.35V, 1.35V)
Device Version : 5th Version
Grade : Commercial Grade
描述
The 4Gb Double-Data-Rate-3 (DDR3(L)) DRAM is a high-speed CMOS SDRAM containing 4,294,967,296 bits.
It is internally configured as an octal-bank DRAM.
The 4Gb chip is organized as 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks.
These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential clocks (CK rising and CK falling).
All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.
These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages.
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