IPB180P04P4L-02 原装 场效应管
OptiMOS® -P2 Power-Transistor
-40V, P-Ch, 2.4 mΩmax, Automotive MOSFET, D2PAK 7pin, OptiMOS™-P2
IPB180P04P4L-02 原装 场效应管 的技术参数：
|
产品种类 |
MOSFET |
|
RoHS |
是 |
|
安装风格 |
SMD/SMT |
|
晶体管极性 |
P-Channel |
|
通道数量 |
1 Channel |
|
Vds-漏源极击穿电压 |
40 V |
|
Id-连续漏极电流 |
180 A |
|
Rds On-漏源导通电阻 |
3.9 mOhms |
|
Vgs -栅极-源极电压 |
- 16 V, + 5 V |
|
Vgs th-栅源极阈值电压 |
1.2 V |
|
Qg-栅极电荷 |
220 nC |
|
工作温度 |
- 55 C TO + 175 C |
|
Pd-功率耗散 |
150 W |
|
通道模式 |
Enhancement |
|
资格 |
AEC-Q101 |
|
配置 |
Single |
|
系列 |
OptiMOS-P2 |
|
晶体管类型 |
1 P-Channel |
|
下降时间 |
119 ns |
|
上升时间 |
28 ns |
|
典型关闭延迟时间 |
146 ns |
|
典型接通延迟时间 |
32 ns |
IPB180P04P4L-02 原装 场效应管 的特征：
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (RoHS compliant)
100% Avalanche tested
No charge pump required for high side drive.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Lowest switching and conduction power losses for highest thermal efficiency
Robust packages with superior quality and reliability
Standard packages TO-252, TO-263, TO-220, TO-262
High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump 
询价
