原装W29N01HVSINA NAND FLASH
1G-BIT 3.3V NAND FLASH MEMORY
原装W29N01HVSINA NAND FLASH的技术参数：
商品目录 NAND FLASH
存储器类型 Non-Volatile
存储器构架(格式) FLASH
技术 NAND Flash
存储器容量 1Gb (128M x 8)
写周期时间（页） 250us
存储器接口类型 Parallel
工作电压 2.7V ~ 3.6V
工作温度 -40℃~85℃
原装W29N01HVSINA NAND FLASH的一般描述
The W29N01HV (1G-bit) NAND Flash memory provides a storage solution for embedded systems with
limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing
media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power
supply with active current consumption as low as 25mA 10uA for CMOS standby current.
The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes.
Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes
for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for
error management functions).
The W29N01HV supports the standard NAND flash memory interface using the multiplexed 8-bit bus to
transfer data, addresses, and command instructions. The five control signals, CLE, ALE, #CE, #RE and
#WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write
Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
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