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MT25QL256ABA8ESF-0SIT TR 全新原装 NOR FLASH
MT25QL256ABA8ESF-0SIT TR 全新原装 NOR FLASH
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MT25QL256ABA8ESF-0SIT TR 全新原装 NOR FLASH

型号:

MT25QL256ABA8ESF-0SIT TR

制造商:

MICRON

批次:

23+

Rohs:

无铅/环保:

无铅/环保

产品信息

MT25QL256ABA8ESF-0SIT TR 全新原装 NOR FLASH 的技术参数:

制造商

Micron Technology

产品种类

NOR闪存

RoHS

安装风格

SMD/SMT

系列

MT25QL

存储容量

256 Mbit

max时钟频率

133 MHz

接口类型

SPI

组织

32 M x 8

定时类型

Synchronous

数据总线宽度

8 bit

电源电压

2.7 V to 3.6 V

电源电流max

35 mA

工作温度

- 40 C to + 85 C

封装

Cut Tape

封装

MouseReel

封装

Reel

存储类型

NOR

速度

133 MHz

湿度敏感性

Yes

产品类型

NOR Flash

标准

Not Supported

子类别

Memory & Data Storage

 

MT25QL256ABA8ESF-0SIT TR 全新原装 NOR FLASH 的特征:

SPI-compatible serial bus interface

 Single and double transfer rate (STR/DTR)

 Clock frequency

– 133 MHz (MAX) for all protocols in STR

– 90 MHz (MAX) for all protocols in DTR

 Dual/quad I/O commands for increased throughput up to 90 MB/s

 Supported protocols: Extended, Dual and Quad I/O

both STR and DTR

 Execute-in-place (XIP)

 PROGRAM/ERASE SUSPEND operations

 Volatile and nonvolatile configuration settings

 Software reset

 Additional reset pin for selected part numbers

 3-byte and 4-byte address modes – enable memory

access beyond 128Mb

 Dedicated 64-byte OTP area outside main memory

– Readable and user-lockable

– Permanent lock with PROGRAM OTP command

 Erase capability

– Bulk erase

– Sector erase 64KB uniform granularity

– Subsector erase 4KB, 32KB granularity

 Erase performance: 400KB/sec (64KB sector)

 Erase performance: 80KB/sec (4KB sub-sector)

 Program performance: 2MB/sec

 Security and write protection

– Volatile and nonvolatile locking and software

write protection for each 64KB sector

– Nonvolatile configuration locking

– Password protection

– Hardware write protection: nonvolatile bits

(BP[3:0] and TB) define protected area size

– Program/erase protection during power-up

– CRC detects accidental changes to raw data

 Electronic signature

– JEDEC-standard 3-byte signature (BA19h)

– Extended device ID: two additional bytes identify

device factory options

 JESD47H-compliant

– Minimum 100,000 ERASE cycles per sector

– Data retention: 20 years (TYP)