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原装供应K9F1G08U0E-SIB0 SLC NAND
原装供应K9F1G08U0E-SIB0 SLC NAND
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原装供应K9F1G08U0E-SIB0 SLC NAND

型号:

K9F1G08U0E-SIB0

制造商:

SAMSUNG/三星

封装:

TSOP

批次:

21+

引脚数:

48

产品信息

原装供应K9F1G08U0E-SIB0 SLC NAND

 

 

原装供应K9F1G08U0E-SIB0 SLC NAND的一般描述:

Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08U0Bs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

 

原装供应K9F1G08U0E-SIB0 SLC NAND的技术参数:

容量 1 Gb

架构 x8

VCC 范围 2.7 ~ 3.6 V

I/O 速度    40 Mbps

封装类型 TSOP

针脚数目 48

工作温度 -40 ~ 85 °C

ECC 片上    ECC