W29N01HVSINA NAND FLASH 原装
IC FLASH 1GBIT PARALLEL 48TSOP
FLASH - NAND（SLC） 存储器 IC 1Gb（128M x 8） 并联 25 ns 48-TSOP
1G-BIT 3.3V NAND FLASH MEMORY
W29N01HVSINA NAND FLASH 原装的描述：
The W29N01HV (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos.
The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA 10uA for CMOS standby current.
The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each.
Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions).
W29N01HVSINA NAND FLASH 原装的技术参数：
|
类别 |
存储器 |
|
制造商 |
Winbond Electronics |
|
RoHS 状态 |
符合 ROHS3 规范 |
|
湿气敏感性等级 (MSL) |
3（168 小时） |
|
REACH 状态 |
非 REACH 产品 |
|
存储器类型 |
非易失 |
|
存储器格式 |
闪存 |
|
技术 |
FLASH - NAND（SLC） |
|
存储容量 |
1Gb（128M x 8） |
|
存储器接口 |
并联 |
|
写周期时间 - 字，页 |
25ns |
|
访问时间 |
25 ns |
|
电压 - 供电 |
2.7V ~ 3.6V |
|
工作温度 |
-40°C ~ 85°C（TA） |
|
安装类型 |
表面贴装型 |
|
封装/外壳 |
48-TFSOP（0.724"，18.40mm 宽） |
询价
