W29N02GVSIAA NAND FLASH 原装
NAND Flash 2G-bit NAND flash, 3V x 8bit
W29N02GVSIAA NAND FLASH 原装的技术参数：
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制造商: |
Winbond |
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技术: |
NAND Flash |
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RoHS: |
是 |
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安装样式: |
SMD/SMT |
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系列: |
W29N02GV |
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Interface Type: |
Parallel |
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格式 - 存储器： |
闪存 |
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存储器类型： |
FLASH - NAND（SLC） |
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存储容量： |
2G（256M x 8） |
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速度： |
25ns |
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封装/外壳： |
48-TFSOP（0.724"，18.40mm 宽） |
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供应商器件封装： |
48-TSOP |
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Data Bus Width: |
8 bit |
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工作电压: |
2.7 V ~3.6 V |
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Supply Current - Max: |
35 mA |
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工作温度: |
- 40 C ~ + 85 C |
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商标: |
Winbond |
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Moisture Sensitive: |
Yes |
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产品类型: |
NAND Flash |
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包装量: |
192 |
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Subcategory: |
Memory & Data Storage |
W29N02GVSIAA NAND FLASH 原装的描述：
The W29N02GV(2G-bit) NANDFlash memory provides a storage solution for embedded systems with limited space, pins and power.
It is ideal for code shadowing to RAM,solid state applications andstoring media data such as, voice, video, text and photos.
The device operates on a single 2.7V to 3.6Vpower supply with active current consumption as low as 25mAat 3Vand 10uA forCMOS standby current.The memory array totals 276,824,064bytes, and organized into 2,048erasable blocks of 135,168bytes. Each block consists of 64 programmablepages of 2,112-byteseach.
Each page consists of 2,048-bytesforthe main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions).
询价
