TC58BVG0S3HBAI4 Nand Flash
铠侠企业级存储器 集成电路IC 串行型存储器设备 (9mm x 11mm )
TC58BVG0S3HBAI4 Nand Flash 的技术参数：
|
容量 (bit) |
1G |
|
Tech. node (nm) |
24 |
|
Block size (bit) |
(128K+4K)×8 |
|
I/O (bit) |
8 |
|
描述 |
1Gbit BENAND, 3.3V, x8, 24nm, BGA |
|
RoHS |
是 |
|
封装 |
FBGA-63 |
|
温度规格 |
-40 to 85 °C |
|
电源电压 |
2.7 to 3.6 V |
|
Design rule |
24nm |
TC58BVG0S3HBAI4 Nand Flash的描述：
The TC58BVG0S3HBAI4 is a single 3.3V 1Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 +64) bytes ′64 pages ′1024blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes +4 Kbytes: 2112 bytes ′64 pages).
The TC58BVG0S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed,making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
询价
