TC58CVG0S3HRAIJ 原装 NAND FLASH
FLASH - NAND（SLC） 存储器 IC 1Gb（128M x 8） SPI 133 MHz 180 μs 8-WSON（6x8）
TC58CVG0S3HRAIJ 原装 NAND FLASH的技术参数：
|
容量(bit) |
2G |
|
Tech. node (nm) |
24 |
|
存储器格式 |
闪存 |
|
存储器类型 |
非易失 |
|
外包装 |
TRAY |
|
Block size (bit) |
(128K+4K)×8 |
|
I/O (bit) |
1,2,4 |
|
存储器接口 |
SPI |
|
RoHS |
是 |
|
封装 |
WSON8 |
|
工作电压（伏） |
2.7 to 3.6 |
|
访问时间 |
180 μs |
|
时钟频率 |
133 MHz |
|
温度规格 |
-40°C ~ 85°C (TA) |
TC58CVG0S3HRAIJ 原装 NAND FLASH的描述：
The TC58CVG0S3HRAIJ is a Serial Interface NAND Flash memory for embedded applications which supports the
SPI interface. The TC58CVG0S3HRAIJ is organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The device
has a 2112 byte data buffer which allows program and read data to be transferred between the buffer and the memory
cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes:
2112 bytes × 64 pages). The device has the high speed mode for sequential Page Read operation. When high speed
mode is enabled, the average of tR is shortened.
The TC58CVG0S3HRAIJ has ECC logic on the chip and 8bit read errors for each (512 bytes + 16 bytes) can be
corrected. The details of the internal ECC function is shown in 4.15. Internal ECC.
询价
