TC58CVG1S3HRAIJ 原装 NAND FLASH
NAND闪存 2Gb 2nd Generation Serial NAND WSON8 24nm 3.3V
TC58CVG1S3HRAIJ 原装 NAND FLASH 的技术参数：
|
制造商: |
Kioxia |
|
产品种类: |
NAND闪存 |
|
RoHS: |
是 |
|
安装风格: |
SMD/SMT |
|
封装 / 箱体: |
WSON-8 |
|
存储容量: |
2 Gbit |
|
接口类型: |
SPI |
|
I/O(bit) |
1,2,4 |
|
组织: |
256 M x 8 |
|
数据总线宽度: |
8 bit |
|
电源电压: |
2.7 V to 3.6 V |
|
电源电流（max）: |
24 mA |
|
工作温度: |
- 40 C to + 85 C |
|
封装: |
Tray |
|
（max）时钟频率: |
133 MHz |
|
湿度敏感性: |
Yes |
|
产品类型: |
NAND Flash |
|
速度: |
180 us |
|
工厂包装数量: |
480 |
|
子类别: |
Memory & Data Storage |
TC58CVG1S3HRAIJ 原装 NAND FLASH 的描述：
The TC58CVG1S3HRAIJ is a Serial Interface NAND Flash memory for embedded applications which supports the SPI interface. The TC58CVG1S3HRAIJ is organized as (2048 + 64) bytes × 64 pages × 2048 blocks.
The device has a 2112 byte data buffer which allows program and read data to be transferred between the buffer and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The device has the high speed mode for sequential Page Read operation. When high speed mode is enabled, the average of tR is shortened.
The TC58CVG1S3HRAIJ has ECC logic on the chip and 8bit read errors for each (512 bytes + 16 bytes) can be corrected. The details of the internal ECC function is shown in 4.15. Internal ECC.
询价
