供应K9WBG08U1M 原装 NAND FLASH
K9WBG08U1M 原装 NAND FLASH 的技术参数：
|
商品目录 |
NOR FLASH |
|
存储器构架(格式) |
FLASH |
|
架构 |
x8 |
|
工作电压 |
2.7V ~ 3.6V |
供应K9WBG08U1M 原装 NAND FLASH 的特征
• Voltage Supply
- 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V
• Organization
- Memory Cell Array : (2G + 64M) x 8bit
- Data Register : (4K + 128) x 8bit
• Automatic Program and Erase
- Page Program : (4K + 128)Byte
- Block Erase : (256K + 8K)Byte
• Page Read Operation
- Page Size : (4K + 128)Byte
- Random Read : 25μs(Max.)
- Serial Access : 25ns(Min.)
* K9NCG08U5M : 50ns(Min.)
• Fast Write Cycle Time
- Page Program time : 200μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
2G x 8 Bit / 4G x 8 Bit / 8G x 8 Bit NAND Flash Memory
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9KAG08U0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9WBG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9WBG08U1M-ICB0/IIB0
52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
- K9MCG08U5M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
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KLM8G1GETF-B041 10000 BGA 22+ SAMSUNG/三星
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