TH58NVG7S2FTA30 原装 NAND FLASH
Toshiba’s SLC NAND advanced flash memory products provide cutting-edge endurance and data retention for sensitive or frequently used system data.
For long-lasting products or systems working with extremely high data throughput between the host and the memory, Toshiba's SLC is a suitable solution.
Toshiba’s new BENAND™ removes the burden of error correction code (ECC) from the host processor by embedding ECC directly in the hardware while maintaining the same specifications, reliability and performance as raw SLC NAND.
TH58NVG7S2FTA30 原装 NAND FLASH的技术参数：
|
制造商 |
TOSHIBA/东芝 |
|
封装 |
TSOP |
|
针脚数 |
48 PIN |
|
描述 |
FLASH 闪存SLC 32nm 128G bit |
|
产品类型 |
NAND FLASH |
|
类别 |
集成电路IC -存储器 |
|
Rohs |
是 |
|
工作电压 |
3.3v |
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THGBMNG5D1LBAIL 10000 BGA 22+ KOXIA/铠侠
THGBMJG7C1LBAIL 10000 BGA 22+ KOXIA/铠侠
THGBMJG6C1LBAIL 10000 BGA 22+ KOXIA/铠侠
THGBMHG6C1LBAIL 10000 BGA 22+ KOXIA/铠侠
TC58NVG1S3HTA00 10000 BGA 22+ KOXIA/铠侠
TC58NVG0S3HTA00 10000 BGA 22+ KOXIA/铠侠
TC58NVG0S3ETAI0 10000 BGA 22+ KOXIA/铠侠
TC58BVG1S3HTA00 10000 BGA 22+ KOXIA/铠侠
TC58BVG0S3HTA00 10000 BGA 22+ KOXIA/铠侠
NT5CC64M16GP-DII 10000 BGA 22+ NANYA/南亚
K4B4G1646E-BCMA 10000 BGA 22+ SAMSUNG/三星
K4B4G0846E-BYMA 10000 BGA 22+ SAMSUNG/三星
K4AAG165WA-BCWE 10000 BGA 22+ SAMSUNG/三星
K4AAG165WA-BCTD 10000 BGA 22+ SAMSUNG/三星
K4A8G165WC-BCTD 10000 BGA 22+ SAMSUNG/三星
K4A8G165WC-BCRC 10000 BGA 22+ SAMSUNG/三星
K4A8G165WB-BCRC 10000 BGA 22+ SAMSUNG/三星
K4A4G165WF-BCTD 10000 BGA 22+ SAMSUNG/三星
K4A4G165WE-BCRC 10000 BGA 22+ SAMSUNG/三星
H9HCNNNCPUMLHR-NME 10000 BGA 22+ SK HYNIX/海力士
H9HCNNNCPMMLXR-NEE 10000 BGA 22+ SK HYNIX/海力士
H9HCNNNCPMALHR-NEE 10000 BGA 22+ SK HYNIX/海力士
H9HCNNNBPUMLHR-NMO 10000 BGA 22+ SK HYNIX/海力士
H9HCNNNBPUMLHR-NMN 10000 BGA 22+ SK HYNIX/海力士
H9HCNNNBKUMLHR-NME 10000 BGA 22+ SK HYNIX/海力士
H9HCNNNBKMALHR-NEE 10000 BGA 22+ SK HYNIX/海力士
H9HCNNN8KUMLHR-NLN 10000 BGA 22+ SK HYNIX/海力士
H9CCNNNCPTALBR-NUD 10000 BGA 22+ SK HYNIX/海力士
H9CCNNNBKTALBR-NUD 10000 BGA 22+ SK HYNIX/海力士
H9CCNNNBJTALAR-NUD 10000 BGA 22+ SK HYNIX/海力士
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