AFT05MS031NR1 原装LDMOS晶体管
AFT05MS031NR1 原装LDMOS晶体管
|
制造商 |
NXP |
|
产品种类 |
射频金属氧化物半导体场效应(RF MOSFET)晶体管 |
|
RoHS |
是 |
|
晶体管极性 |
N-Channel |
|
晶体管类型 |
LDMOS |
|
技术 |
Si |
|
Vds-漏源极击穿电压 |
- 500 mV, 40 V |
|
工作频率 |
136 MHz to 520 MHz |
|
增益 |
19 dB |
|
输出功率 |
33 W |
|
工作温度: |
- 40 C to+ 150 C |
|
安装风格: |
SMD/SMT |
|
封装/箱体: |
TO-270-2 |
|
封装: |
Reel |
|
封装: |
Cut Tape |
|
封装: |
MouseReel |
|
配置: |
Single |
|
正向跨导（min）: |
5.8 S |
|
湿度敏感性: |
Yes |
|
Pd-功率耗散: |
294 W |
|
产品类型: |
RF MOSFET Transistors |
|
工厂包装数量: |
500 |
|
子类别: |
MOSFETs |
|
类型: |
RF Power MOSFET |
|
Vgs -栅极-源极电压: |
- 6 V, 12 V |
|
Vgs th-栅源极阈值电压: |
2.1 VDC |
|
THGBMNG5D1LBAIL |
KIOXIA/铠侠 |
|
THGBMJG7C1LBAIL |
KIOXIA/铠侠 |
|
THGBMJG6C1LBAIL |
KIOXIA/铠侠 |
|
THGBMHG6C1LBAIL |
KIOXIA/铠侠 |
|
TC58NVG1S3HTA00 |
KIOXIA/铠侠 |
|
TC58NVG0S3HTA00 |
KIOXIA/铠侠 |
|
NT5CC64M16GP-DI |
NANYA/南亚 |
|
NT5CC256M16ER-EKI |
NANYA/南亚 |
|
NT5CC256M16ER-EK |
NANYA/南亚 |
|
KMFN60012M-B214 |
SAMSUNG/三星 |
|
KMDX60018M-B425 |
SAMSUNG/三星 |
|
KLMDG8JENB-B041 |
SAMSUNG/三星 |
|
KLMCG4JETD-B041 |
SAMSUNG/三星 |
|
KLMBG2JETD-B041 |
SAMSUNG/三星 |
|
KLMAG1JETD-B041 |
SAMSUNG/三星 |
|
KLM8G1GETF-B041 |
SAMSUNG/三星 |
|
KLM4G1FETE-B041 |
SAMSUNG/三星 |
|
K4G80325FC-HC25 |
SAMSUNG/三星 |
|
K4E8E324ED-EGCG |
SAMSUNG/三星 |
|
K4E8E324EB-EGCF |
SAMSUNG/三星 |
|
K4E6E304EB-EGCF |
SAMSUNG/三星 |
|
K4E6E304ED-EGCG |
SAMSUNG/三星 |
|
K4E6E304EC-EGCG |
SAMSUNG/三星 |
|
K4E6E304EC-EGCF |
SAMSUNG/三星 |
|
K4B4G1646E-BYMA |
SAMSUNG/三星 |
|
K4B4G1646E-BYK0 |
SAMSUNG/三星 |
|
K4B4G1646E-BCNB |
SAMSUNG/三星 |
|
K4AAG165WA-BCTD |
SAMSUNG/三星 |
|
K4A8G165WC-BCTD |
SAMSUNG/三星 |
|
K4A8G165WC-BCRC |
SAMSUNG/三星 |
|
K4A8G165WB-BCRC |
SAMSUNG/三星 |
|
K4A4G165WF-BCTD |
SAMSUNG/三星 |
|
H9HCNNNCPMMLXR-NEE |
SK HYNIX/海力士 |
|
H9HCNNNCPMALHR-NEE |
SK HYNIX/海力士 |
|
H9HCNNNBPUMLHR-NMO |
SK HYNIX/海力士 |
|
H9HCNNNBPUMLHR-NMN |
SK HYNIX/海力士 |
|
H9HCNNNBKUMLHR-NME |
SK HYNIX/海力士 |
|
H9HCNNNBKMALHR-NEE |
SK HYNIX/海力士 |
|
H9CCNNN8GTALAR-NUD |
SK HYNIX/海力士 |
|
H5TQ4G63EFR-RDC |
SK HYNIX/海力士 |
|
H5TQ4G63CFR-RDC |
SK HYNIX/海力士 |
|
H5TQ2G83GFR-RDC |
SK HYNIX/海力士 |
|
H5TQ2G63GFR-TEC |
SK HYNIX/海力士 |
|
H5TC4G63EFR-RDA |
SK HYNIX/海力士 |
|
H5TC2G83GFR-PBA |
SK HYNIX/海力士 |
|
H26M41208HPR |
SK HYNIX/海力士 |
|
H26M41204HPR |
SK HYNIX/海力士 |
|
MTFC8GAKAJCN-4MIT |
MICRON/镁光 |
|
MTFC4GACAJCN-4MIT |
MICRON/镁光 |
|
MTFC4GACAJCN-1MWT |
MICRON/镁光 |
|
MT53E256M32D2DS-053WT:B |
MICRON/镁光 |
|
MT52L512M32D2PF-107WT:B |
MICRON/镁光 |
|
MT52L256M32D1PF-107WT:B |
MICRON/镁光 |
|
MT41K64M16TW-107:J |
MICRON/镁光 |
|
MT41K64M16TW-107IT:J |
MICRON/镁光 |
|
MT41K512M8DA-107:P |
MICRON/镁光 |
|
MT41K256M16TW-107:P |
MICRON/镁光 |
|
MT41K256M16TW-107IT:P |
MICRON/镁光 |
|
MT41K256M16TW-107AIT:P |
MICRON/镁光 |
|
MT29F2G08ABAEAWP-IT:E |
MICRON/镁光 |
|
MT29F2G08ABAEAWP:E |
MICRON/镁光 |
|
MT29F2G08ABAEAH4:E |
MICRON/镁光 |
|
MT29F2G01ABAGDWB-IT:G |
MICRON/镁光 |
|
K4UBE3D4AA-MGCL |
SAMSUNG/三星 |
|
K4UBE3D4AB-MGCL |
SAMSUNG/三星 |
|
K4U6E3S4AA-MGCR |
SAMSUNG/三星 |
询价
