W25Q16JVSSIQ 原装 NOR FLASH
3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI
W25Q16JVSSIQ 原装 NOR FLASH 的技术参数：
制造商 | Winbond |
产品种类 | NOR闪存 |
RoHS | 是 |
安装风格 | SMD/SMT |
封装 / 箱体 | SOIC-8 |
系列 | W25Q16JV |
存储容量 | 16 Mbit |
（max）时钟频率 | 133 MHz |
接口类型 | SPI |
定时类型 | Synchronous |
数据总线宽度 | 8 bit |
电源电压 | 2.7 V to 3.6 V |
电源电流（max） | 25 mA |
工作温度 | - 40 C to + 85 C |
湿度敏感性 | Yes |
W25Q16JVSSIQ 原装 NOR FLASH 的描述：
The W25Q16JV (16M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current consumption as low as 1μA for power-down.
The W25Q16JV array is organized into 8,192 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q16JV has 512 erasable sectors and 32 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage.
KLMBG2JETD-B041 10K 22+
KLMAG1JETD-B041 10K 22+
KLM8G1GETF-B041 10K 22+
KLM4G1FETE-B041 10K 22+
K4E8E324EB-EGCF 10K 22+
K4E6E304EB-EGCF 10K 22+
K4E6E304EC-EGCG 10K 22+
K4B4G1646E-BCNB 10K 22+
K4A8G165WB-BCRC 10K 22+
优势出，有需要到的欢迎联系
询价
