NT5AD512M16A4-HR 原装全新DDR4
制造商 | NANYA |
速率 | 2400 Mbps |
工作电压 | 1.2V / 1.2V / 2.5V |
框架 | 512Mx16 |
Device Version | 1 st version |
封装 | TFBGA |
针脚数 | 96-Ball |
Data Integrity
- Auto Self Refresh (ASR) by DRAM built-in TS
- Auto Refresh and Self Refresh Modes
l DRAM Access Bandwidth
- Separated IO gating structures by Bank Groups
- Self Refresh Abort
- Fine Granularity Refresh
l Signal Synchronization
- Write Leveling via MR settings1
- Read Leveling via MPR
l Reliability & Error Handling
- Command/Address Parity
- Databus Write CRC
- MPR readout
- Boundary Scan (X16)
- Post Package Repair
Signal Integrity
- Internal VREFDQ Training
- Read Preamble Training
- Gear Down Mode
- Per DRAM Addressability
- Configurable DS for system compatibility
- Configurable On-Die Termination
- Data bus inversion (DBI)
- ZQ Calibration for DS/ODT impedance accuracy
via external ZQ pad (240 Ω ± 1%)
l Power Saving & Efficiency
- POD with VDDQ termination
- Command/Address Latency (CAL)
- Maximum Power Saving
- Low-power Auto Self Refresh (LPASR)
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