原装K4E8E324EB-EGCF LPDDR3 16Gb 的技术参数：
制造商SAMSUNG
电压1.8 / 1.2 V
温度规格-25°C~+70°C
速度933MHz
原装K4E8E324EB-EGCF LPDDR3 16Gb 的 特性：
Double-data rate architecture; two data transfers per clock cycle
•Bidirectional data strobes (DQS_t, DQS_c), These are transmitted/received with data to be used in capturing data at the receiver
•Differential clock inputs (CK_t and CK_c)
•Differential data strobes (DQS_t and DQS_c)
•Commands & addresses entered on both positive and negative CK edges; data and data mask referenced to both edges of DQS
•8 internal banks for concurrent operation
•Data mask (DM) for write data
•Burst Length: 8
•Burst Type: Sequential
•Read & Write latency : Refer to Table 45 LPDDR3 AC Timing Table
•Auto Precharge option for each burst access
•Configurable Drive Strength
•All Bank Refresh, Per Bank Refresh and Self Refresh
•Partial Array Self Refresh and Temperature Compensated Self Refresh
•Write Leveling
•CA Calibration
•HSUL_12 compatible inputs
•VDD1/VDD2/VDDQ/VDDCA
: 1.8V/1.2V/1.2V / 1.2V
•No DLL : CK to DQS is not synchronized
•Edge aligned data output, center aligned data input
•Operating Temperature : -25 ~ 85°C
•On Die Termination using ODT pin
K4E8E324EB-EGCF LPDDR3
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