NT5CC128M16IP-DI 全新原装 DDR3
Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM
NT5CC128M16IP-DI 全新原装 DDR3 的描述：
The 2Gb Double-Data-Rate-3 (DDR3(L)) is double data rate architecture to achieve high-speed operation. It isinternally configured as an eight bank DRAMs.
The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 banks or 16Mbit x 16 I/Os x 8 bank devices. Thesesynchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for generalapplications.
The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and addressinputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling).
All I/Os are synchronized with a single ended DQS ordifferential DQS pair in a source synchronous fashion.These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available inBGA packages.
NT5CC128M16IP-DI 全新原装 DDR3 的参数：
产品分类 | DRAM 动态随机存储器 |
封装/外壳 | BGA96_8X13MM |
时钟频率（Max） | 800MHz |
存储器类型 | 易失 |
存储容量 | 2Gb |
工作电压（范围） | 1.35V |
接口类型 | 并联 |
工作温度 | 0℃ to +95℃ |
安装类型 | SMT |
存取时间 | 160ns |
原始制造商 | Nanya Technology |
RoHS | 是 |
长x宽/尺寸 | 13.00 x 8.00mm |
高度 | 1.00mm |
存储温度 | -55 to +150℃ |
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全新原包原装可含税（香港可交）
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