NT5CC128M16JR-EK 全新原装 DDR3
Commercial and Industrial DDR3(L) 2Gb SDRAM
NT5CC128M16JR-EK 全新原装 DDR3 的技术参数：
制造商 | NANYA |
外包装 | TRAY |
温度规格 | 0°C~+95°C |
封装 | TFBGA-96 |
电压(V） | 1.35v |
Basis DDR3 Compliant
- 8n Prefetch Architecture
- Differential Clock(CK/CK) and Data Strobe(DQS/DQS)
- Double-data rate on DQs, DQS and DM
Data Integrity
- Auto Self Refresh (ASR) by DRAM built-in TS
- Auto Refresh and Self Refresh Modes
Power Saving Mode
- Power Down Mode
Signal Integrity
- Configurable DS for system compatibility
- Configurable On-Die Termination
- ZQ Calibration for DS/ODT impedance accuracy viaexternal ZQ pad (240 ohm ± 1%)
Signal Synchronization
- Write Leveling via MR settings 5
- Read Leveling via MPR
Interface and Power Supply
- SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V)
- SSTL_1353for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V)
询价
