K4E6E304EC-EGCG LPDDR3 三代低功耗双倍数据率同步动态随机存储器
原装K4E6E304EC-EGCG LPDDR3 的技术参数：
温度规格 - -25°C~+85°C
速度 - 1066 MHZ
电压(伏) - 1.2V
ECCN (US)- EAR99
Part Status- Active
无铅/环保- 无铅/环保
HTS - 8542.32.00.36
原装K4E6E304EC-EGCG LPDDR3 的 关键特性：
• Double-data rate architecture; two data transfers per clock cycle
• Bidirectional data strobes (DQS_t, DQS_c), These are transmitted/received with data to be used in capturing data at the receiver
• Differential clock inputs (CK_t and CK_c)
• Differential data strobes (DQS_t and DQS_c)
• Commands & addresses entered on both positive and negative CK edges; data and data mask referenced to both edges of DQS
• 8 internal banks for concurrent operation
• Data mask (DM) for write data
• Burst Length: 8
• Burst Type: Sequential
• Read & Write latency : Refer to Table 45 LPDDR3 AC Timing Table
• Auto Precharge option for each burst access
• Configurable Drive Strength
• All Bank Refresh, Per Bank Refresh and Self Refresh
• Partial Array Self Refresh and Temperature Compensated Self Refresh
• Write Leveling
• CA Calibration
• HSUL_12 compatible inputs
• VDD1/VDD2/VDDQ/VDDCA
: 1.8V/1.2V/1.2V / 1.2V
• No DLL : CK to DQS is not synchronized
• Edge aligned data output, center aligned data input
• Operating Temperature : -25 ~ 85°C
• On Die Termination using ODT pin\
• 2/CS, 2CKE
K4E6E304EC-EGCG LPDDR3
K4E6E304EC-EGCG LPDDR3
16G DDP = 256M x 32 (32M x 32 x 8 banks) + 256M x 32 (32M x 32 x 8 banks)
178FBGA, 11x11.5
原装K4E6E304EC-EGCG LPDDR3 的技术参数：
脚位/封装 FBGA-178
无铅/环保 无铅/环保
电压(伏) 1.2V
温度规格 -25°C~+85°C
速度 1066 MHZ
询价
