深圳市迅丰达电子科技有限公司

原装K4B2G1646F-BYMA DDR3 2Gb 的技术参数：

制造商SAMSUNG

类型动态存储器

存储类型DDR3

容量2Gb

框架x16

封装96FBGA

RoHS是

速度    1866Mbps

电压    1.35 V

工作温度 0 ~ 85 C

描述     D25 128*16 1Gb 1.35V 1866MHz

Low power, efficient DRAM solution

- Up to 30% reduction in power consumption versus DDR2

Samsung's industry-first 30 nm class DRAM consumes less power, lowering the TCO with a 30% reduction in power consumption versus the previous generation.

原装K4B2G1646F-BYMA DDR3 2Gb

FBGA-96 DDR SDRAM ROHS