原装K4A8G165WB-BCTD DDR4 存储器芯片
8Gb B-die DDR4 SDRAM x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant)
原装K4A8G165WB-BCTD DDR4 存储器芯片的技术参数：
Density8 Gb
Org.512M x 16
Speed2666 Mbps
Voltage1.2 V
Temp.0 ~ 85°C
Package96FBGA
DRAM Type DDR4 SDRAM
Chip Density (bit) 8G
Organization 512Mx16
Number of Internal Banks 8
Number of Words per Bank 64M
Number of Bits/Word (bit) 16
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 2666
Maximum Access Time (ns) 0.17
Address Bus Width (bit) 18
Interface Type POD
| 品牌 | SAMSUNG |
| 温度规格 | 0 ~ 85 °C |
| 电压 | 1.2V |
| 速度 | 2666 Mbps |
| 容量 | 8Gb |
| 架构 | 512M x 16 |
原装K4A8G165WB-BCTD DDR4 存储器芯片 的描述：
8 Gb 512M x 16 2666 Mbps 1.2 V 0 ~ 85°C 96FBGA Mass Production
The 8Gb DDR4 SDRAM B-die is organized as a 64Mbit x 16 I/Os x 8banks
device. This synchronous device achieves high speed double-data-rate
transfer rates of up to 2666Mb/sec/pin (DDR4-2666) for general applications.
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