K4B2G0846F-BCMA 原装 DDR3
2Gb F-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
K4B2G0846F-BCMA 原装 DDR3 的技术参数：
制造商 | SAMSUNG |
RoHS | 是 |
容量 | 2GB |
工作电压 | 1.5V |
封装 / 箱体 | FBGA-78 |
速率 | 1866 Mbps |
工作温度 | 0 ~ 85 °C |
架构 | 256M x 8 |
生产状态 | 停产 |
The 2Gb DDR3 SDRAM F-die is organized as a 32Mbit x 8 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset . All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling).
All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR3 device operates with a single 1.5V ± 0.075V power supply and 1.5V ± 0.075V VDDQ. The 2Gb DDR3 F-die device is available in 78balls FBGA(x8).
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