H5TQ4G63EFR-RDI 原装 DDR3
4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)
H5TQ4G63EFR-RDI 原装 DDR3 技术参数：
制造商 | SK Hynix MEMORY |
RoHS | 是 |
容量 | 4Gb, 8K/64ms Refresh |
工作电压 | 1.5V |
架构 | x16 |
工作温度 | -40°C ~ 95°C |
封装 / 箱体 | 96ball FBGA SDP |
速率 | 1866Mbps |
DRAM 类型 | DDR3 SDRAM |
全新原包原装可含税（香港可交）:
MT29F4G08ABAEAWP:E
MT29F2G08ABAGAWP-IT:G
MT29F2G08ABAEAWP-IT:E
MT29F2G08ABAEAWP:E
MT29F2G08ABAEAH4:E
MT29F2G01ABAGDWB-IT:G
MT53D512M64D4HR-053 WT:D
K4UBE3D4AA-MGCL
K4UBE3D4AB-MGCL
K4U6E3S4AA-MGCR
H5TQ4G63EFR-RDI 原装 DDR3 的描述：
The H5TC4G83EFR-xxA(I,L,J,K),H5TQC4G63EFR-xxA(I,L,J,K) are a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. SK Hynix 4Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the clock (falling edges of the clock), data, data strobes and write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
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