NT6CL512T32AM-H0 原装 LPDDR3
Commercial Mobile LPDDR3 16Gb(DDP) SDRAM
NT6CL512T32AM-H0 原装 LPDDR3 的技术参数：
制造商 | NANYA |
存储容量 | 16Gb (DDP) |
RoHS | 是 |
架构 | 512M x 32 |
速率 | 2133 Mbps / RL=16 |
工作温度 | - 30℃ to +85℃, extending 105℃ |
DRAM 类型 | LPDDR3 SDRAM |
产品种类 | 动态随机存取存储器 |
工作电压 | 1.8V, 1.2V, 1.2V, 1.2V |
封装 / 箱体 | 178-Ball FBGA 10.50 x 11.50 x 0.83 |
全新原包原装可含税（香港可交）:
MT29F4G08ABAEAWP:E
MT29F2G08ABAGAWP-IT:G
MT29F2G08ABAEAWP-IT:E
MT29F2G08ABAEAWP:E
MT29F2G08ABAEAH4:E
MT29F2G01ABAGDWB-IT:G
MT53D512M64D4HR-053 WT:D
K4UBE3D4AA-MGCL
K4UBE3D4AB-MGCL
K4U6E3S4AA-MGCR
NT6CL512T32AM-H0 原装 LPDDR3 的特征
1. Basis LPDDR3 Compliant
- Low Power Consumption
- 8n Prefetch Architecture and BL8 only
2. Signal Integrity
- Configurable DS for system compatibility
- Configurable On-Die Termination1
-ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240Ω± 1%)
3. Training for Signals’ Synchronization
- DQ Calibration offering specific DQ output patterns
- CA Training
- Write Leveling via MR settings
4. Data Integrity
- DRAM built-in Temperature Sensor for
-Temperature Compensated Self Refresh (TCSR)
- Auto Refresh and Self Refresh Modes
5. Power Saving Modes
- Deep Power Down Mode (DPD)
- Partial Array Self Refresh (PASR)
- Clock Stop capability during idle period
6. HSUL12 interface and Power Supply
- VDD1= 1.70 to 1.95V
- VDD2/VDDQ/VDDCA = 1.14 to 1.3V
询价
