原装K4E6E304EC-EGCF LPDDR3 DRAM
原装K4E6E304EC-EGCF LPDDR3 DRAM 的描述
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung￠s advanced CMOS process to realize high band-width, low power consumption and high reliability.
原装K4E6E304EC-EGCF LPDDR3 DRAM的技术参数：
制造商 SAMSUNG
容量 16GB
架构 512Mx32
速度 933MHZ
工作电压 1.8 / 1.2 / 1.2 V
Bus-Width x32
Package BGA
Pin/Ball Count 178
Max. Data-Rate 1866 MT/s
Temperature Range -25 to 85°C TC
Automotive No
Voltage VDD1:1.8V/VDD2:1.2V/VDDQ:1.2V
RoHS-Compliant Yes
全新原包原装可含税（香港可交）
KMGX6001BA-B514
KMGP6001BA-B514
KMFN60012M-B214
KMDX60018M-B425
KLMDG8JENB-B041
KLMCG4JETD-B041
KLMBG2JETD-B041
KLMAG1JETD-B041
KLM8G1GETF-B041
KLM4G1FETE-B041
K9F1G08U0E-SIB0
K4Z80325BC-HC14
K4E6E304EC-EGCF
询价
