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原装K4A8G165WC-BCRC DDR4 动态随机存储器
原装K4A8G165WC-BCRC DDR4 动态随机存储器
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原装K4A8G165WC-BCRC DDR4 动态随机存储器

型号:

K4A8G165WC-BCRC

制造商:

SAMSUNG/三星

封装:

BGA

批次:

21+

无铅/环保:

无铅/环保

产品信息

原装K4A8G165WC-BCRC动态随机存储器

8Gb C-die DDR4 SDRAM x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant)

 

制造商 SAMSUNG

架构 512M x 16

容量 8GB

速率 2400mbps

温度 0~85°C

封装 96-FBGA

工作电压 1.2V

Quantity      On Order

Lead Free Status / RoHS Status     Lead free / RoHS Compliant

Lead Time     Send email to learn lead time

 

These circuits consist of two independent, high gain, internally frequency-compensated op-amps, specifically designed to operate from a single power supply over a wide range of voltages. The low-power supply drain is independent of the magnitude of the power supply voltage.

 

Application areas include transducer amplifiers, DC gain blocks and all the conventional op-amp circuits, which can now be more easily implemented in single power supply systems. For example, these circuits can be directly supplied with the standard +5 V, which is used in logic systems and will easily provide the required interface electronics with no additional power supply.