原装NT5CC64M16GP-DI DDR3(L) 1Gb SDRAM
NT5CC64M16GP-DI Commercial Industrial and Automotive DDR3(L) 1Gb SDRAM
NT5CC64M16GP-DI DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.35V 96-Pin VFBGA
NT5CC64M16GP-DI 的技术参数：
EU RoHS ： Compliant ：
ECCN (US) ： EAR99
芯片密度（位） ： 1G
组织 ： 64Mx16
位数/Word（位） ： 16
数据总线宽度（位） ： 16
max时钟速率(MHz) ： 800
输入/输出线数（位） ： 8
供应商包 ： VFBGA
针脚数 ： 96
描述：
The 1Gb Double-Data-Rate-3 (DDR3(L)) G-die DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM.
The 1Gb chip is organized as 16Mbit x 8 I/Os x 8 banks or 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/ pin/sec for general applications.
The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.
These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067/+0.1V power supply and are available in BGA packages.
询价
