原装K4E6E304ED-EGCG同步动态随机存储器
三代低功耗双倍数据率同步动态随机存储器K4E6E304ED-EGCG
16Gb DDP LPDDR3 SDRAM 178FBGA, 11x11.5 512M x32 (32M x32 x 8banks)
容量16 Gb
架构x32
速率2133 Mbps
工作电压1.8 / 1.2 / 1.2 V
工作温度-25 ~ 85 °C
封装178FBGA
KEY FEATURE
• Double-data rate architecture; two data transfers per clock cycle
• Bidirectional data strobes (DQS_t, DQS_c), These are transmitted/received with data to be used in capturing data at the receiver
• Differential clock inputs (CK_t and CK_c)
• Differential data strobes (DQS_t and DQS_c)
• Commands & addresses entered on both positive and negative CK edges; data and data mask referenced to both edges of DQS
• 8 internal banks for concurrent operation
• Data mask (DM) for write data
• Burst Length: 8
• Burst Type: Sequential
• Read & Write latency : Refer to Table 46 LPDDR3 AC Timing Table
• Auto Precharge option for each burst access
• Configurable Drive Strength
• All Bank Refresh, Per Bank Refresh and Self Refresh
• Partial Array Self Refresh and Temperature Compensated Self Refresh
• Write Leveling
• CA Calibration
• HSUL_12 compatible inputs
• VDD1/VDD2/VDDQ/VDDCA
: 1.8V/1.2V/1.2V / 1.2V
• No DLL : CK to DQS is not synchronized
• Edge aligned data output, center aligned data input
• Operating Temperature : -25 ~ 85°C
• On Die Termination using ODT pin
• 2/CS, 2CKE
询价
