MT41K64M16 by Micron is 1.35V version of 1.5V DDR3L SDRAM that comes in an FBGA packed. The MT41K64M16TW-107 IT:J specifically is a 8 Meg x 16 x 8 banks product that comes in a lead-free 96- ball FPGA package that is 8x14mm and a 1.07ns timing cycle. This product is also industrial temperature rated from -40C to 95C. This 1Gb DDR3 SDRAM uses a double data rate architecture to achieve high-speed operating which is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pines. The read and write accesses to this DDR3 SDRAM are burst-oriented, programmable, and start at a selected location making this perfect for any RAM application.
原装MT41K64M16TW-107 IT:J LPDDR3 的技术参数：
制造商 : Micron
存储器类型 : 易失
存储器格式 : DRAM
技术 : SDRAM - DDR3L
存储容量 : 1Gb（64M x 16）
存储器接口 : 并联
时钟频率 : 933 MHz
访问时间 : 20 ns
电压 - 供电 : 1.283V ~ 1.45V
工作温度 : -40°C ~ 95°C（TC）
安装类型 : 表面贴装型
封装/外壳 : 96-TFBGA
RoHS 状态 : 符合 ROHS3 规范
湿气敏感性等级 (MSL) : 3（168 小时）
REACH 状态 : 非 REACH 产品
原装MT41K64M16TW-107 IT:J LPDDR3 的描述：
MT41K64M16TW-107 IT:J TR（卷带：2000一包）
IC DRAM 1GBIT PARALLEL 96FBGA
SDRAM - DDR3L 存储器 IC 1Gb（64M x 16） 并联 933 MHz 20 ns 96-FBGA（8x14）
原装MT41K64M16TW-107 IT:J LPDDR3 的产品特征：
• VDD = VDDQ = +1.35V (1.283V to 1.45V)
• Backward compatible to VDD = VDDQ = 1.5V ±0.075V
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
• Self refresh temperature (SRT)
• Automatic self refresh (ASR)
• Write leveling
• Multipurpose register
• Output driver calibration
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