全新原装H5TQ4G83EFR-RDC 512MX8 DDR3
H5TQ4G83EFR-RDC的技术参数：
脚位/封装 : FBGA-78
外包装 : TRAY
无铅/环保 : 无铅/环保
电压(伏) : 1.5 V
温度规格 : 0°C~+95°C
速度 : 1866 MHz
Number Of Words : 512M
Bit Organization : x8
Density : 4G
Die Generation : 6th
Product Family : DRAM
No Of Banks : 8 banks
Shipping Method : tray
H5TQ4G83EFR-RDC 的描述
The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
询价
