原装 H9HCNNNBKMALHR-NEE LPDDR4
脚位/封装 FBGA-200
RoHS RoHS
无铅/环保 无铅/环保
电压(伏) 1.1 V
温度规格 -25°C~+85°C
速度 1866 MHz
Generation 2nd
Dram Voltage 1.1V/0.6V,LPDDR4
Nvm Option None
Dram Density 16Gb, DDP, 2Ch, 1CS
Nvm Speed none
Package Material Lead & Halogen Free
Product Mode LPDDR4 Only
The LPDDR4X is a new mobile DRAM standard that is an extension of the original LPDDR4, and is expected to reduce power consumption of the DRAM sub-system by 18~20% according to developers (everything else remains the same: a 200~266 MHz internal memory array frequency, 16n prefetch, etc.).
To do that, LPDDR4X cuts output driver power (I/O VDDQ voltage) by 45%, from 1.1 V to 0.6 V. LPDDR4X is supported by a number of mobile SoC developers.
The first application processor to support the new type of memory is MediaTek’s Helio P20 that was announced nearly a year ago and the initial devices powered by the chip are likely to hit the market in 1H 2017.
Another notable SoC to support LPDDR4X is Qualcomm’s new flagship Snapdragon 835, which was announced in November and detailed earlier this month. Smartphones featuring this chip will not show up for a while, but MWC just around the corner which lends nicely to various handset announcements.
全新原包原装可含税（香港可交）
H9HCNNNCPMALHR-NEE
H9HCNNNBPUMLHR-NMO
H9HCNNNBPUMLHR-NMN
H9HCNNNBKUMLHR-NME
H9HCNNNBKMALHR-NEE
H9HCNNN8KUMLHR-NLN
H9CCNNNCPTALBR-NUD
H9CCNNNBKTALBR-NUD
H9CCNNNBJTALAR-NUD
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