原装K4B4G1646E-BCNB DDR3
4Gb E-die DDR3 SDRAM Only x16
96FBGA with Lead-Free & Halogen-Free(RoHS compliant)
DDR3-2133 (14-14-14)2 DDR3 SDRAM / 256MX16 DDR3 / FBGA-96 / 1.5 V
原装K4B4G1646E-BCNB DDR3的技术参数：
脚位/封装 ：FBGA-96
外包装 ：TRAY
无铅/环保 ：无铅/环保
电压(伏) ：1.5 V
温度规格 ：0°C~+85°C
速度 ：1066 MHZ
标准包装数量 ：1120
Number Of Words ：256M
Bit Organization ：x16
Density ：4G
Generation ：6th Generation
Internal Banks ：8 Banks
原装K4B4G1646E-BCNB DDR3的一般描述：
The 4Gb DDR3 SDRAM E-die is organized as a 32Mbit x 16 I/Os x 8banks, device.
This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset .
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address
information in a RAS/CAS multiplexing style.
The DDR3 device operate with a single 1.5V(1.425V~1.575V)power supply and 1.5V(1.425V~1.575V) VDDQ.
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