H5TQ4G63EFR-RDC DDR3
4Gb DDR3 SDRAM
Lead-Free&Halogen-Free
(RoHS Compliant)
DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 96-Pin FBGA
H5TQ4G63EFR-RDC DDR3的描述：
The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC,are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock.
While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it.
The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
分类：内存>内存芯片> DRAM芯片
ECRCN:EAR99
密度：1GBIT
类型：DDR3 SDRAM
组织：128MX16
数据总线宽度：8位
地址总线宽度：17位
工作温度：0°C ~ 85°C
基本封装类型：球栅阵列
封装：BGA
封装描述：细间距球栅阵列
铅形状：Ball
引脚数：96
PCB：96
销距（mm）：0.8
MSL：N/A
Maximum Reflow Temperature（°C）：255-260
询价
