原装H5TQ2G63GFR-TEC DDR3 SDRAM 的技术参数：
脚位/封装 FBGA-96
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 1.5 V
温度规格 0°C~+95°C
速度 2133 MHZ
标准包装数量 160
Number Of Words 128M
Bit Organization x16
Density 2G
Operating Temperature commercial temperature(0°C~85°C) & normal power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 8th
No Of Banks 8 banks
Product Family DRAM
Shipping Method tray
原装H5TQ2G63GFR-TEC DDR3 SDRAM的描述：
The H5TQ2G83GFR-xxC, H5TQ2G63GFR-xxC,H5TQ2G83GFR-xxI, H5TQ2G63GFR-xxI, H5TQ2G83GFRxxL,H5TQ2G63GFR-xxL,H5TQ2G83GFR-xxJ,H5TQ2G63GFR-xxJ are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
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