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原装H5AN4G6NBJR-UHC DDR4供应
原装H5AN4G6NBJR-UHC DDR4供应
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原装H5AN4G6NBJR-UHC DDR4供应

型号:

H5AN4G6NBJR-UHC

制造商:

SK Hynix /海力士

封装:

FBGA

批次:

21+/22+

无铅/环保:

无铅/环保

针脚数:

96

产品信息

原装H5AN4G6NBJR-UHC DDR4供应

4Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)


原装H5AN4G6NBJR-UHC DDR4 的技术参数:

型号:H5AN4G6NBJR-UHC

品牌:海力士

系列:DDR4

包装说明:TFBGA,

ECCN 代码:EAR99

JESD-30 代码:R-PBGA-B96

内存 IC 类型:动态随机存取存储器 

内存宽度:16 

功能数量:1

端口数:1

终端数量:96  

组织: 256MX16

 

原装H5AN4G6NBJR-UHC DDR4的描述

The H5AN4G4NBJR-xxC, H5AN4G8NBJR-xxC, H5AN4G6NBJR-xxC, are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.

SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock.

While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it.

The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.