H5AN4G6NBJR-VKC DDR4
SK HYNIX/海力士 SDRAM 256MX16 At 2666Mbps
Lead-Free&Halogen-Free(RoHS Compliant)
H5AN4G6NBJR-VKC DDR4 的技术参数：
脚位/封装 FBGA-96
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 1.2V
温度规格 0°C~+95°C
速度 1333 MHZ
Number Of Words 256M
Bit Organization x16
Density 4G
Operating Temperature commercial temperature(0°C ~ 85°C) & normal power
Package Material lead & halogen free(ROHS compliant)
Die Generation 3rd
No Of Banks Non-TSV
Product Family DRAM
Shipping Method tray
H5AN4G6NBJR-VKC DDR4 的描述：
The H5AN4G4NBJR-xxC, H5AN4G8NBJR-xxC, H5AN4G6NBJR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock.
While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it.
The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
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