F-RAM NVRAM FRAM Memory Serial
256-Kbit(32K x 8bit)，SPI接口，工作电压：2.0V to 3.6V
原装FM25V02A-GTR 铁电存储器(FRAM)的技术参数：
制造商: Cypress Semiconductor
产品种类: F-RAM
安装风格: SMD/SMT
封装 / 箱体: SOIC-8
存储容量: 256 kbit
接口类型: SPI
存储器：RAM
存储器类型：FRAM（Ferroelectric RAM）
存储容量：256K（32K x 8）
速度：40MHz
接口：SPI 串行
电压 - 电源：2 V ~ 3.6 V
工作温度：-40°C ~ 85°C（TA）
封装/外壳：8-SOIC（0.154"，3.90mm 宽）
供应商器件封装：8-SOIC
组织: 32 k x 8
系列: FM24V02
封装: Reel
封装: Cut Tape
封装: MouseReel
商标: Cypress Semiconductor
湿度敏感性: Yes
工作电源电压: 3.3 V
产品类型: FRAM
包装量 ： 2500
原装FM25V02A-GTR 铁电存储器(FRAM) 的描述 ：
The FM25V02A is a 256-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by serial
flash, EEPROM, and other nonvolatile memories.
Unlike serial flash and EEPROM, the FM25V02A performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25V02A is capable of supporting
1014 read/write cycles, or 100 million times more write cycles
than EEPROM.
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