NT5CB256M16ER-FL LPDDR3 原装
Commercial and Industrial DDR3(L) 4Gb SDRAM
NT5CB256M16ER-FL LPDDR3 原装的技术参数：
|
制造商 |
Nanya |
|
型号 |
NT5CB256M16ER-FL |
|
无铅/环保 |
无铅/环保 |
|
电压(伏) |
1.5 V |
|
温度规格 |
0°C~+95°C |
|
速度 |
1066 MHZ |
|
组织 |
256M x 16 |
|
封装 |
FBGA- |
|
脚位 |
96 |
|
包装 |
托盘 |
|
Density |
4GB |
|
存储技术 |
SDRAM-DDR3 |
NT5CB256M16ER-FL LPDDR3 原装的描述：
The DDR3(L) SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM.
The DDR3(L) SDRAM uses an 8n prefetch architecture to achieve high speed operation. The 8n prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single read or write operation for the DDR3(L) SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and eight corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.
Read and write operation to the DDR3(L) SDRAM are burst oriented, start at a selected location, and continue for a burst length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration of an Active command, which is then followed by a Read or Write command.
The address bits registered coincident with the Active command are used to select the bank and row to be activated (BA0-BA2 select the bank; A0-A15 select the row). The address bit registered coincident with the Read or Write command are used to select the starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10), and select BC4 or BL8 mode ‘on the fly’ (via A12) if enabled in the mode register.
Prior to normal operation, the DDR3(L) SDRAM must be powered up and initialized in a predefined manner. The following sections provide detailed information covering device reset and initialization, register definition, command descriptions and device operation.
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